78. INGAN/GAN HIGH Q, HIGH VOLTAGE AND HIGH LINEARITY MICROWAVE VARACTOR DIODES

Department: Electrical & Computer Engineering
Research Institute Affiliation: Center for Wireless Communications (CWC)
Faculty Advisor(s): Peter M Asbeck | Paul K.L. Yu

Primary Student
Name: Wei Lu
Email: w8lu@ucsd.edu
Phone: 858-356-8948
Grad Year: 2012

Abstract
Semiconductor varactors are receiving increasing attention because of their potential to provide adaptive and tunable characteristics for the front-end of wireless communication systems, enabling efficient multi-band and software-defined radios. For base-station applications, Q (=1/(2πfRC), where R is the effective series resistance, C is the capacitance, and f is the operating frequency) > 100, breakdown voltage > 100 V and OIP3 > 65 dBm are required. The combination of high Q and high-breakdown voltage requires semiconductors with high mobility and high-breakdown electric field; GaN with a mobility of >~ 500 cm2/Vsec and a breakdown electric field of 2.5 MV/cm is a promising candidate. In this work, the addition of a thin InGaN surface layer was shown to increase the diode breakdown voltage. InGaN/GaN Schottky-diode microwave varactors with Q > 100 at 1 GHz, breakdown voltage > 120 V and OIP3 > 70 dBm are reported. To the best of our knowledge, the combination of Q, voltage handling capability and OIP3 represents advancement from any other reported varactors.

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