115. A MINIATURE RF MEMS METAL-CONTACT SWITCH WITH HIGH BIAXIAL AND STRESS-GRADIENT TOLERANCE

Department: Electrical & Computer Engineering
Research Institute Affiliation: Center for Wireless Communications (CWC)
Faculty Advisor(s): Gabriel Rebeiz

Primary Student
Name: Chenhui Niu
Email: cniu@ucsd.edu
Phone: 858-822-5940
Grad Year: 2013

Abstract
This poster presents a miniature RF MEMS (Micro-Electro-Mechanical System) switch design optimized for the high residual stress and stress gradient available in a thin metal layer process. The switch demonstrates a stress gradient tolerance of +/-100 MPa/Ám, with <40% pull-down voltage change. The up-state capacitance is 9.4 fF and results in 20 dB isolation at 20 GHz. The contact resistance is 3.6 &#937; for a Au-Au contact under 30 V actuation voltage. The design can be placed in arrays to reduce the contact resistance and increase the power handling in the switch. It is compatible with a CMOS back-end under a range of stress conditions.

Related Links:

  1. http://www.jacobsschool.ucsd.edu/faculty/faculty_bios/index.sfe?fmp_recid=238

Related Files:

  1. Chenhui_ResearchExpo2012.pdf

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