116. HIGH POWER, HIGH Q, HIGH RELIABILITY RF MEMS SWITCHES

Department: Electrical & Computer Engineering
Faculty Advisor(s): Gabriel Rebeiz

Primary Student
Name: Hosein Zareie
Email: hzareie@ucsd.edu
Phone: 555-555-5555
Grad Year: 2014

Abstract
This poster presents the design and characterization of a high power RF MEMS switched capacitor. The switch is based on a 4 um-thick metal plate and four symmetrical springs. The design has low sensitivity to residual stress and stress gradients. S-parameter measurements result in Cu=0.08 pF, Cd=0.55 pF (Cr=6.9), power handling > 10 W, and a switching time of 12-15 us. The pull-down and release voltages are stable to +/-3 V over 20-120 C. The design can be arrayed for N-bit switched-capacitor networks.The Quality factor of the device is very high and measured around 100 at 10GHz. The device also has an excellent reliability.

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