80. A BIFET CONSTRUCTIVE WAVE POWER AMPLIFIER FOR A MULTI-BAND, BIDIRECTIONAL MILLIMETER-WAVE FRONT-END

Department: Electrical & Computer Engineering
Faculty Advisor(s): James Buckwalter

Primary Student
Name: Tissana Kijsanayotin
Email: tkijsana@ucsd.edu
Phone: 651-468-5936
Grad Year: 2015

Abstract
The quest for higher data rate for wireless communication systems has been the driving force for the millimeter-wave (30 to 300 GHz) front-end development. A key challenge for a circuit operating in this frequency range remains the operation of a high output power, high efficiency power amplifier. Here, we present a BiFET Constructive Wave Power Amplifier (BiFET CWPA). The NFET-HBT cascode (BiFET) configuration enables high power operation as well as enhances amplifier's thermal stability. The constructive wave amplification technique offers a graceful degradation in operation and broadband matching, unique characteristic of this amplifier topology. Furthermore, the BiFET CWPA can be used as a building block for a multi-band, bidirectional millimeter-wave front-end, enabling area and cost saving for multi-antenna integrated phased array transceivers. The four-stage BiFET CWPA is fabricated in a 0.12-μm SiGe BiCMOS process and operates from 52-62 GHz with a peak small-signal gain of 10.7 dB at 60 GHz. Peak output saturation power (Psat) is 16.4 dBm with associated power-added efficiency (PAE) of 15.3%. The amplifier nominally consumes 52 mW (4 V x 0.13 mA) and the active area occupies only 0.074 mm2 of die space.

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