128. GRAPHENE OXIDE AS A P-DOPANT AND ANTI-REFLECTION COATING LAYER, IN GRAPHENE /SILICON SOLAR CELLS

Department: Mechanical & Aerospace Engineering
Research Institute Affiliation: Graduate Program in Materials Science and Engineering
Faculty Advisor(s): Prabhakar R. Bandaru

Primary Student
Name: Serdar Yavuz
Email: seyavuz@ucsd.edu
Phone: 347-264-4806
Grad Year: 2018

Abstract
It has shown that power conversion efficiency (PCE) of single layer graphen/silicon (Gr/Si) Schottky junction based solar cell has increased from 3.6% to 10.6% by applying a simple, cost effective graphene oxide (GO) spin coating. While the initial intent of using GO was to enhance the stability of Gr/Si solar cell by reducing the propensity of oxidation of the underlying Si, we have seen significant additional benefits. For instance, GO has shown to serve to a p-dopant to the Gr/Si solar cell, contributing to reduce sheet resistance and increase the work function (W) of graphene. Additionally, for the first time, we have shown that an optimal thickness of the GO could function as an ARC layer for the Gr/Si solar cell, further increasing the current density (Jsc). The stability of the GO coated Gr/Si solar cell seems to be unprecedented from a comparison with literature, indicating that our methodology could address the stability issue of Gr/Si solar cell.

Industry Application Area(s)
Electronics/Photonics | Energy/Clean technology | Semiconductor

Related Links:

  1. http://pubs.rsc.org/en/content/articlelanding/2016/nr/c5nr09143h#!divAbstract

Related Files:

  1. Graphical-Abstract.pdf

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