San Diego, CA, May 29, 2018 -- Shadi Dayeh, an electrical and computer engineering professor at the UC San Diego Jacobs School of Engineering, has been selected by the International Symposium on Compound Semiconductors (ISCS) to receive the 2018 ISCS Young Scientist Award.
Established in 1986, the ISCS Young Scientist Award acknowledges technical achievements in the field of compound semiconductors by a scientist younger than 40. Dayeh is cited “for contributions to overcoming the critical thickness limitation in heteroepitaxy.” The award will be presented on the first day of the Compound Semiconductor Week that will take place in Cambridge, Mass. from May 29 – June 1, 2018.
|UC San Diego electrical and computer engineering professor Shadi Dayeh has been selected by the International Symposium on Compound Semiconductors (ISCS) to receive the 2018 ISCS Young Scientist Award.|
Dayeh joined the UC San Diego faculty in Nov. 2012 as an assistant professor and was promoted to associate professor in 2016. He received his Maitrise-en-Sciences in Physics and Electronics from the Lebanese University in Beirut in 2001, an MS in Electrical Engineering from SMU in 2003, and a Ph.D. in Electrical and Computer Engineering from the UC San Diego Jacobs School of Engineering in 2008. He joined Los Alamos National Laboratory as a Director’s Fellow in 2008 and as a Distinguished JR Oppenheimer Fellow in 2010.
Heteroepitaxy refers to the ordered/crystalline growth of dissimilar materials to improve their physical properties or complement their functionality. Growing these kinds of combinations of materials at high quality requires exquisite control of their topology to overcome limitations imposed by the differences in their lattice constants and thermal expansion properties.
Dayeh has advanced the heteroepitaxy at these two fronts. At Los Alamos, he established the growth of axial and radial Germanium/Silicon (Ge/Si) heterostructures and carried out the first experimental measure of an increased critical thickness in core/shell nanowires, exceeding the limitations of the lattice mismatch based on the principle of strain sharing at the nanoscale. These structures have been used in an array of studies in electron, tunnel, and spin transistors, solar cells and hetero-engineered battery anodes. He received the Distinguished Postdoctoral Performance Award at Los Alamos in 2011.
At the UC San Diego Jacobs School of Engineering, he established the Integrated Electronics and Biointerfaces Laboratory which focuses in part on heterogeneous integration of compound semiconductors. His lab expanded the growth of Gallium Nitride (GaN) on Si from previously ~4.5μm to over 20μm exceeding the limitations of the thermal mismatches based on the principle of diverting the stresses to planar surfaces that are parallel to crack planes. Such thicknesses are necessary to build vertical GaN power devices on cost-effective and scalable Si substrates. Using these layers, his group demonstrated in 2017 the first vertical GaN transistors on Si.
At both Los Alamos and UC San Diego, his group studied the epitaxial growth and regrowth of alloyed and compound contacts to nanoscale transistors made of Ge, Si, and Indium Gallium Arsenide (InGaAs) in a process commonly referred to as silicidation. Dayeh pioneered the use of silicidation for heterointegration. His group used the process to demonstrate the first published InGaAs FinFETs on Si, and to build vertical arrays of individually addressable nanowire neural probes. He received the NSF Early Career Award in 2014.
Dayeh is also affiliated with the Materials Science and Engineering Program, NanoEngineering Department, and the Qualcomm Institute at UC San Diego.