156. on the pressure induced amorphization and nanocrystallization of semiconducting materials and its potential applications

Department: Mechanical & Aerospace Engineering
Research Institute Affiliation: Graduate Program in Materials Science and Engineering
Faculty Advisor(s): Marc A. Meyers

Primary Student
Name: Shiteng Zhao
Email: shz087@ucsd.edu
Phone: 858-534-5513
Grad Year: 2017

Abstract
Application of pressure above a certain threshold will lead to amorphization, a process of crystals losing its long-range periodicity, of some semiconducting materials such as silicon and germanium. This process can be achieved by depositing high power pulsed laser onto a target material where an extreme state of high pressure and temperature can be created. The resultant material structure is characterized by the state-of-the-art transmission electron microscopy. We have also shown that large-scale molecular dynamic simulations will shed light on such a complex physical phenomenon. Subsequently, it will be shown that the amorphous semiconductor can be nanocrystallized by a transient heat flux. Hence, a novel route to rapidly manufacture amorphous and nanocrystalline semiconductor.

Industry Application Area(s)
Electronics/Photonics | Materials | Semiconductor

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