polarization effects on the interfacial conductivity in the laalo3/srtio3 heterostructure: first-principles study
Name: Maziar Alexander Behtash
Grad Year: 2018
We studied the influence of uniaxial strain on the electron transport properties of 2DEG at the n-type interface of the LAO/STO HS via first-principles density functional theory calculations. We found that applying  tensile strain on the STO substrate causes a significant reduction of the induced polarization in the LAO film relative to the unstrained system. This reduction weakens the driving force against charge transfer from LAO to STO, causing an increase in the interfacial charge carrier density. The uniaxial strain also leads to a decrease of the effective mass of interfacial mobile electrons, resulting in a higher electron mobility. These findings suggest that applying a uniaxial  tensile strain on the STO substrate can significantly enhance the interfacial conductivity of the LAO/STO HS system.
Industry Application Area(s)
Electronics/Photonics | Materials | Semiconductor