liquid phase epitaxy doping for high-performance emitters in silicon solar cells

Department: NanoEngineering
Faculty Advisor(s): David Fenning

Primary Student
Name: Tulika Rastogi
Phone: 858-925-4647
Grad Year: 2018

Liquid phase epitaxy doping is proposed as a facile low-temperature, low-cost replacement for boron and/or phosphorus diffusion. This doping process decouples the emitter formation from the slow solid-state kinetics of gas diffusion; the doping profile formed is largely time-independent ? theoretically, doping could be done in a brief firing step or during bulk impurity gettering, allowing throughput to be optimized without constraining cell architecture in next generation solar cells. The liquid phase epitaxy approach results in a nearly uniform doping concentration profile with the potential for significantly lower saturation currents and improved surface passivation in comparison to existing and proposed industrial diffused emitters. We examine the performance of emitters doped via liquid phase epitaxy using simulation and present experimental demonstration.

Industry Application Area(s)
Energy/Clean technology | Materials | Semiconductor

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